Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>V</mi><mi...

書誌詳細
出版年:	Micromachines
主要な著者:	Stanislav Tyaginov, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, Adrian Chasin, Ben Kaczer
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2023-10-01
主題:	hot-carrier degradation compact physics model secondary carriers impact ionization interface traps carrier transport
オンライン･アクセス:	https://www.mdpi.com/2072-666X/14/11/2018

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