Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

In this work, single photon avalanche diodes (SPADs) were fabricated using the standard 180 nm complementary metal-oxide semiconductor process. Their small size of 15–16 μ m and low operating voltage made it possible to easily integrate them with readout circuits for compact on-chip sensors, particu...

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Bibliographic Details

Published in:	Nuclear Engineering and Technology
Main Authors:	Jinseok Oh, Hakcheon Jeong, Min Sun Lee, Inyong Kwon
Format:	Article
Language:	English
Published:	Elsevier 2024-08-01
Subjects:	Single photon avalanche diodes (SPADs) Premature edge breakdown (PEB) Depletion region Breakdown voltage Guard ring Dark count rate (DCR)
Online Access:	http://www.sciencedirect.com/science/article/pii/S1738573324001244