Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V2O3 Films and the Influence of its Variability on Scaled Devices

Abstract The pressure‐driven Mott‐transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5%, and 15%. A change in resistivity of nearly two orders of magnitude is found for 2%...

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Bibliographic Details

Published in:	Advanced Physics Research
Main Authors:	Johannes Mohr, Tyler Hennen, Daniel Bedau, Rainer Waser, Dirk J. Wouters
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-10-01
Subjects:	doped V2O3 high‐pressure measurements Mott‐transitions percolation scaling laws
Online Access:	https://doi.org/10.1002/apxr.202400040