Physics-Based α-IGZO TFTs Compact Modeling and Neural Network Application With 2T0C DRAM Cell

Advanced amorphous oxide devices such as amorphous InGaZnO (<inline-formula> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula>-IGZO) operate based on mechanisms that differ significantly from those of conventional Si-based devices, primarily due to s...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Hyoungsoo Kim, Eunchan Park, Been Kwak, Daewoong Kwon, Hyunwoo Kim
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Subjects:	InGaZnOx (IGZO) compact model 2T0C DRAM neural network oxide TFT verilog
Online Access:	https://ieeexplore.ieee.org/document/11151167/