An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer
Anew single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure. The comparative analysis demonstrates that the IL lifts the conduction ba...
| الحاوية / القاعدة: | IEEE Access |
|---|---|
| المؤلفون الرئيسيون: | , , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
IEEE
2020-01-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://ieeexplore.ieee.org/document/8952693/ |