Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 107 cm−2. The metal‐or...

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Bibliographic Details

Published in:	Advanced Photonics Research
Main Authors:	Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-07-01
Subjects:	III–V heteroepitaxy on Si dislocation filtering quantum well lasers reliability
Online Access:	https://doi.org/10.1002/adpr.202300348