Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

Full description

Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu, Ping Chen
Format:	Article
Language:	English
Published:	MDPI AG 2021-04-01
Subjects:	anomalous temperature-dependent photoluminescence non-equilibrium carriers dynamics InGaN/GaN MQWs hydrogen treatment
Online Access:	https://www.mdpi.com/2079-4991/11/4/1023