Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial st...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao
Format:	Article
Language:	English
Published:	MDPI AG 2024-09-01
Subjects:	ultra-thin barrier layer double channel GaN HEMT InAlN barrier AlN barrier radio frequency
Online Access:	https://www.mdpi.com/2072-666X/15/10/1220