Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO<sub>2</sub> Deposited by RF Plasma Sputter

In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO<sub>2</sub>) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through RF magnetron sputtering...

Full description

Bibliographic Details
Published in:Nanomaterials
Main Authors: Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo
Format: Article
Language:English
Published: MDPI AG 2024-08-01
Subjects:
hafnium oxide
sputtering
orthorhombic
substrate
ferroelectricity
Online Access:https://www.mdpi.com/2079-4991/14/17/1386

Internet

https://www.mdpi.com/2079-4991/14/17/1386

Similar Items