Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3
Abstract Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and de...
| Published in: | Advanced Electronic Materials |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-01-01
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| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300547 |