Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3
Abstract Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and de...
| 出版年: | Advanced Electronic Materials |
|---|---|
| 主要な著者: | , , , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Wiley-VCH
2024-01-01
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| 主題: | |
| オンライン・アクセス: | https://doi.org/10.1002/aelm.202300547 |
