Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3

Abstract Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and de...

詳細記述

書誌詳細
出版年:Advanced Electronic Materials
主要な著者: Jihoon Seo, Juhan Kim, Jae Ha Kim, Jae Hoon Kim, Kookrin Char
フォーマット: 論文
言語:英語
出版事項: Wiley-VCH 2024-01-01
主題:
オンライン・アクセス:https://doi.org/10.1002/aelm.202300547