Fully Deep‐UV Transparent Thin Film Transistors Based on SrSnO3

Abstract Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and de...

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Bibliographic Details
Published in:	Advanced Electronic Materials
Main Authors:	Jihoon Seo, Juhan Kim, Jae Ha Kim, Jae Hoon Kim, Kookrin Char
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-01-01
Subjects:	deep‐UV transparent semiconductors SrSnO3 thin film transistors ultra‐wide bandgap
Online Access:	https://doi.org/10.1002/aelm.202300547

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