Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative solutions for several applications. Most work...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Albert Cirera, Blas Garrido, Antonio Rubio, Ioannis Vourkas
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Subjects:	Current driver electrochemical metallization memory knowm memristor resistive RAM (ReRAM) resistive switching
Online Access:	https://ieeexplore.ieee.org/document/10124933/