Electric Transport in Few-Layer ReSe₂ Transistors Modulated by Air Pressure and Light

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe₂. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe₂ nanosheet. We show that th...

Full description

Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Enver Faella, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Format:	Article
Language:	English
Published:	MDPI AG 2022-05-01
Subjects:	2D materials rhenium selenides ReSe<sub>2</sub> field-effect transistor pressure
Online Access:	https://www.mdpi.com/2079-4991/12/11/1886