Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures

2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their low-dielectric constant and their promise of atomi...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Subjects:	2D materials TMD TFET band-to-band tunneling heterostructures Schottky contacts
Online Access:	https://ieeexplore.ieee.org/document/8315402/