Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection

Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ultra‐high power electronics, and gallium oxide (Ga2O3) has emerged as a highly promising candidate material due to its ultra‐wide bandgap, high intrinsic break...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Shunze Huang, Xuefang Lu, Yinlong Cheng, Jianzhong Xu, Xin Qian, Feng Huang, Richeng Lin
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-08-01
Subjects:	bandgap engineering gallium oxide lanthanide photodetector wide bandgap semiconductor
Online Access:	https://doi.org/10.1002/aelm.202500030