High Reflectivity AlN/Al<sub>1−x</sub>In<sub>x</sub>N Distributed Bragg Reflectors across the UV Regions by Sputtering

To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this report, AlN and Al<sub>1−x</sub>In<sub>x</sub>N layers were first sputtered and characterized concer...

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Bibliographic Details
Published in:Crystals
Main Authors: Ellen Serwaa Frimpong-Manso, Liancheng Wang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Subjects:
III-nitrides
AlN
Al<sub>1−x</sub>In<sub>x</sub>N
DBR
sputtering
Online Access:https://www.mdpi.com/2073-4352/12/2/162

Internet

https://www.mdpi.com/2073-4352/12/2/162

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