Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and li...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Sivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, Maarten Rosmeulen
Format:	Article
Language:	English
Published:	MDPI AG 2021-09-01
Subjects:	work function effective work function dipole metal gate high-k SiO<sub>2</sub>
Online Access:	https://www.mdpi.com/2072-666X/12/9/1084