Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Abstract The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Ef...

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Bibliographic Details
Published in:Advanced Electronic Materials
Main Authors: David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Subjects:
charge pumping
defects
ferroelectric
fefet
fram
ftj
Online Access:https://doi.org/10.1002/aelm.202400686

Internet

https://doi.org/10.1002/aelm.202400686

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