Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied. In this paper, the critical issues correlated with the applications of oxide-based RRAM are addressed. The physical mechanism a...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu
Format:	Article
Language:	English
Published:	IEEE 2016-01-01
Subjects:	Resistive switching memory (RRAM) physical model optimization design unified memory/computing architecture
Online Access:	https://ieeexplore.ieee.org/document/7486051/