Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Abstract An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field‐effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain‐sou...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Yuteng Zhang, Seyed Ehsan Alavi, Ion Soroceanu, Dennis Wanyoike Kamau, Aurelian Rotaru, Isabelle Séguy, Lionel Salmon, Gábor Molnár, Azzedine Bousseksou
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-04-01
Subjects:	mechanical strain organic semiconductor spin crossover transistor
Online Access:	https://doi.org/10.1002/aelm.202400590