Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics

Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine. To understand the nanomachining characteristics of off-axis 4H-SiC and provide...

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Bibliographic Details

Published in:	Applied Sciences
Main Authors:	Miaocao Wang, Fulong Zhu, Yixin Xu, Sheng Liu
Format:	Article
Language:	English
Published:	MDPI AG 2018-11-01
Subjects:	nanocutting off-axis 4H-SiC molecular dynamics defect propagation cutting force
Online Access:	https://www.mdpi.com/2076-3417/8/12/2380