Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well

Four InGaN/GaN multi-quantum well (MQW) samples with different InGaN quantum well growth rates grow via metal-organic chemical vapor deposition (MOCVD) system. The relationship between the growth rate and luminescence characteristics of multiple quantum wells is studied by analyzing the temperature-...

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Bibliographic Details

Published in:	Materials Research Express
Main Authors:	Yuntao Zhao, Guanghui Li, Shuai Zhang, Linkai Yi, Haoran Qi, Feng Liang, Jing Yang, Mei Zhou, Huixing Shen, Degang Zhao
Format:	Article
Language:	English
Published:	IOP Publishing 2021-01-01
Subjects:	InGaN/GaN growth rate MOCVD uniformity luminescence characteristics
Online Access:	https://doi.org/10.1088/2053-1591/abf286