CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide

In this study, a p-Si/ALD-Al<sub>2</sub>O<sub>3</sub>/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al<sub>2</sub>O<s...

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Bibliographic Details
Published in:Sensors
Main Authors: Adham Elshaer, Serge Ecoffey, Abdelatif Jaouad, Stephane Monfray, Dominique Drouin
Format: Article
Language:English
Published: MDPI AG 2024-05-01
Subjects:
hydrogen
sensing
CMOS compatible
MOS structure
ALD
platinum
Online Access:https://www.mdpi.com/1424-8220/24/10/3020

Internet

https://www.mdpi.com/1424-8220/24/10/3020

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