Electrical Characterization by Counter-Doped Pocket Design in Tunnel FETs

The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using a TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and pocket can enhance TFET electrical characteristic...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Ki Ryung Nam, Kwang Soo Kim, Woo Young Choi
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Subjects:	Tunnel field-effect transistor (TFET) counter-doped pocket low net-doped region pocket width tunneling width
Online Access:	https://ieeexplore.ieee.org/document/10082935/