Effect of vacancy defect position on the Zigzag Phosphorene Nanoribbon Tunneling FETs

In this paper, the important characteristics of a Zigzag Phosphorene Nanoribbon Tunneling FET (ZPNR-TFET) are studied by inserting a single vacancy (SV) defect. After adjusting the positions of the defect in the length of the channel, it is found that the SV defect decreases on current in all three...

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Bibliographic Details

Published in:	International Journal of Electronics and Telecommunications
Main Authors:	Hadi Owlia, Nasrollahnejad Mohammad Bagher, Abdalhossein Rezai
Format:	Article
Language:	English
Published:	Polish Academy of Sciences 2025-10-01
Subjects:	phosphorene nanoribbon vacancy defect cp2k method density functional tight binding
Online Access:	https://journals.pan.pl/Content/136927/23-4791-Owlia_sk.pdf