Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions...

詳細記述

書誌詳細

出版年:	Micromachines
主要な著者:	Minji Bang, Jonghyeon Ha, Gyeongyeop Lee, Minki Suh, Jungsik Kim
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2023-05-01
主題:	displacement defect fin field-effect-transistor cosmic rays terrestrial radiation technology computer-aided design (TCAD)
オンライン･アクセス:	https://www.mdpi.com/2072-666X/14/5/1090