Broadband terahertz generation using the semiconductor-metal transition in VO2
We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO2 (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO2 with 280 fs pulses from...
| Published in: | AIP Advances |
|---|---|
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
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| Online Access: | http://dx.doi.org/10.1063/1.4941042 |