Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10<sup>−7</sup>–...

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Bibliographic Details
Published in:Nanomaterials
Main Authors: Max Franck, Jaroslaw Dabrowski, Markus Andreas Schubert, Christian Wenger, Mindaugas Lukosius
Format: Article
Language:English
Published: MDPI AG 2022-09-01
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Online Access:https://www.mdpi.com/2079-4991/12/19/3260