Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy

AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral char...

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Bibliographic Details

Published in:	Журнал нано- та електронної фізики
Main Authors:	M.A. Bazalevsky, G.I. Koltsov, S.I. Didenko, S.Yu. Yurchuk, S.A. Legotin, O.I. Rabinovich, V.N. Murashev, I.P. Kazakov
Format:	Article
Language:	English
Published:	Sumy State University 2014-07-01
Subjects:	Molecular beam epitaxy AlGaAs / GaAs Photodetector Ultraviolet Scintillato
Online Access:	http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03019.pdf