Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy
AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral char...
| Published in: | Журнал нано- та електронної фізики |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-07-01
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| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03019.pdf |
| _version_ | 1849459491782787072 |
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| author | M.A. Bazalevsky G.I. Koltsov S.I. Didenko S.Yu. Yurchuk S.A. Legotin O.I. Rabinovich V.N. Murashev I.P. Kazakov |
| author_facet | M.A. Bazalevsky G.I. Koltsov S.I. Didenko S.Yu. Yurchuk S.A. Legotin O.I. Rabinovich V.N. Murashev I.P. Kazakov |
| author_sort | M.A. Bazalevsky |
| collection | DOAJ |
| container_title | Журнал нано- та електронної фізики |
| description | AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral characteristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id = 3.38 nA at reverse bias Urev = 5 V. |
| format | Article |
| id | doaj-art-bccb667a00754cdcbdfcfb2e88811248 |
| institution | Directory of Open Access Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2014-07-01 |
| publisher | Sumy State University |
| record_format | Article |
| spelling | doaj-art-bccb667a00754cdcbdfcfb2e888112482025-08-20T03:23:18ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-07-016303019-103019-3Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam EpitaxyM.A. Bazalevsky0G.I. Koltsov1S.I. Didenko2S.Yu. Yurchuk3S.A. Legotin4O.I. Rabinovich5V.N. Murashev6I.P. Kazakov7National University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaNational University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, RussiaLebedev Physics Institute, Russian Academy of Sciences, 53, Leninsky prospect, 119991 Moscow, RussiaAlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral characteristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id = 3.38 nA at reverse bias Urev = 5 V.http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03019.pdfMolecular beam epitaxyAlGaAs / GaAsPhotodetectorUltravioletScintillato |
| spellingShingle | M.A. Bazalevsky G.I. Koltsov S.I. Didenko S.Yu. Yurchuk S.A. Legotin O.I. Rabinovich V.N. Murashev I.P. Kazakov Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy Molecular beam epitaxy AlGaAs / GaAs Photodetector Ultraviolet Scintillato |
| title | Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy |
| title_full | Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy |
| title_fullStr | Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy |
| title_full_unstemmed | Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy |
| title_short | Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy |
| title_sort | photosensitive algaas gaas structures grown by molecular beam epitaxy |
| topic | Molecular beam epitaxy AlGaAs / GaAs Photodetector Ultraviolet Scintillato |
| url | http://jnep.sumdu.edu.ua/download/numbers/2014/3/articles/jnep_2014_V6_03019.pdf |
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