Compliance-free, analog RRAM devices based on SnOx

Abstract Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching...

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出版年:	Scientific Reports
主要な著者:	Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis
フォーマット:	論文
言語:	英語
出版事項:	Nature Portfolio 2024-06-01
オンライン･アクセス:	https://doi.org/10.1038/s41598-024-64662-9