Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
Abstract In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. I...
| Published in: | Nanoscale Research Letters |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-05-01
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| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2083-z |