3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Abstract A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectri...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Jiajie Yu, Tianyu Wang, Chen Lu, Zhenhai Li, Kangli Xu, Yongkai Liu, Yifan Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-04-01
Subjects:	3D stacked memory array computing‐in‐memory hafnium‐based ferroelectric memory high density high reliability
Online Access:	https://doi.org/10.1002/aelm.202400438