On the Transconductance of Polysilicon Thin Film Transistors

In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the gr...

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Bibliographic Details

Published in:	Журнал нано- та електронної фізики
Main Authors:	Alka Panwar, B.P. Tyagi
Format:	Article
Language:	English
Published:	Sumy State University 2011-01-01
Subjects:	Polysilicon thin film transistor Grain boundary Grain boundary barrier height Grain boundary trap states Transconductance.
Online Access:	http://jnep.sumdu.edu.ua/download/numbers/2011/3/articles/jnep_2011_V3_N3_28-35.pdf