Influence of backlighting on current-voltage characteristics of InGaN / GaN-based structures with back-shift

Object of study. We investigate Hewlett Packard green LEDs (λmax = 525 nm at room temperature) based on an InGaN solid solution with quantum wells. Purpose of the Study. It is known that in light-emitting structures, optical characteristics are closely related to electrical characteristic...

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Bibliographic Details

Published in:	Известия Саратовского университета. Новая серия: Физика
Main Authors:	Vostretsov, Dmitry Y., Vostretsova, Liubov Nikolaevna, Smirnova, Tatiana S., Dmitriev, Dmitry P.
Format:	Article
Language:	English
Published:	Saratov State University 2021-11-01
Subjects:	quantum well current transfer generalized recombination model photogeneration tunneling
Online Access:	https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2021/11/vostrecov_372-380.pdf