Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire

(11-22) semi-polar GaN is expected to exhibit major advantages compared with current c-plane polar GaN in the fabrication of long wavelength such as green and yellow emitters. However, all the III-nitride based semi-/non- polar laser diodes (LDs) reported so far have been achieved exclusively based...

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Bibliographic Details

Published in:	AIP Advances
Main Authors:	B. Xu, L. Jiu, Y. Gong, Y. Zhang, L. C. Wang, J. Bai, T. Wang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2017-04-01
Online Access:	http://dx.doi.org/10.1063/1.4981137