Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices

High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy. The reliability of IGBT and thyristor has become a key pro...

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Bibliographic Details

Published in:	Zhongguo dianli
Main Authors:	Haoze LUO, Zhong CHEN, Wei YANG, Jia XIE, Di HU, Weiping GUAN
Format:	Article
Language:	Chinese
Published:	State Grid Energy Research Institute 2023-05-01
Subjects:	press-pack device igbt thyristor failure mode and mechanism packaging structure
Online Access:	https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202210121