Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices
High voltage and large capacity press-pack insulated gate bipolar transistor (IGBT) devices and thyristor devices are the core devices in high-voltage DC transmission projects, which are of great significance for the efficient use of energy. The reliability of IGBT and thyristor has become a key pro...
| الحاوية / القاعدة: | Zhongguo dianli |
|---|---|
| المؤلفون الرئيسيون: | , , , , , |
| التنسيق: | مقال |
| اللغة: | الصينية |
| منشور في: |
State Grid Energy Research Institute
2023-05-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202210121 |