Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity

Ferroelectric thin films based on HfO2 have garnered increasing attention worldwide, primarily due to their remarkable compatibility with silicon and scalability, in contrast to traditional perovskite-structured ferroelectric materials. Nonetheless, significant challenges remain in their widespread...

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Bibliographic Details

Published in:	Journal of Advanced Ceramics
Main Authors:	Fei Yan, Ke Cao, Yang Chen, Jiajia Liao, Min Liao, Yichun Zhou
Format:	Article
Language:	English
Published:	Tsinghua University Press 2024-07-01
Subjects:	ferroelectric capacitors thin films ferroelectricity hafnium zirconium oxide
Online Access:	https://www.sciopen.com/article/10.26599/JAC.2024.9220916