Physical modeling for photo-capacitance characteristics of metal oxide TFTs

We propose an amorphous metal oxide thin film transistor photo-capacitance model in the depletion region that takes Fermi level splitting and band-bending rearrangement into consideration. The split Fermi level is used to characterize the variation in trapped electrons under illumination. Those trap...

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Bibliographic Details

Published in:	AIP Advances
Main Authors:	Haoyang Li, Wencai Zuo, Feifan Li, Zhaohua Zhou, Miao Xu, Lei Wang, Weijing Wu, Junbiao Peng
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2024-01-01
Online Access:	http://dx.doi.org/10.1063/5.0185267