Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon

This article presents a unique study on the charge carrier transport in electrochemically anodized mesoporous silicon by combining macroscopic conductivity and thermopower measurements. Temperature‐dependent electrical conductivity measurements reveal a thermally activated transport in extended elec...

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書誌詳細

出版年:	Small Structures
主要な著者:	Tommy Hofmann, Haider Haseeb, Danny Kojda, Natalia Gostkowska‐Lekner, Klaus Habicht
フォーマット:	論文
言語:	英語
出版事項:	Wiley-VCH 2025-04-01
主題:	disorder localization mobility edge nanostructure silicon
オンライン･アクセス:	https://doi.org/10.1002/sstr.202400437