Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-be...

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Bibliographic Details

Published in:	Beilstein Journal of Nanotechnology
Main Authors:	Alexander S. Pashchenko, Leonid S. Lunin, Eleonora M. Danilina, Sergei N. Chebotarev
Format:	Article
Language:	English
Published:	Beilstein-Institut 2018-11-01
Subjects:	infrared photodetectors ion-beam deposition nanoheterostructures photoluminescence quantum dot semiconductors
Online Access:	https://doi.org/10.3762/bjnano.9.261