Unexpected large remnant polarization in Sn-doped Bi4Ti3O ferroelectric film by chemical solution deposition

The A-site rare earth-doped Bi4Ti3O[Formula: see text] (BTO) has been highly interested in nonvolatile ferroelectric random memory devices, piezoelectric devices, electro-optical devices, capacitors, sensors, transducers, etc., due to its low coercive field and superior fatigue resistance properties...

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Bibliographic Details

Published in:	Journal of Advanced Dielectrics
Main Authors:	Y. Zhang, D. P. Song, Z. Z. Hui, H. N. Zhu, J. Yang
Format:	Article
Language:	English
Published:	World Scientific Publishing 2025-06-01
Subjects:	Sn-doping ferroelectric property dielectric property
Online Access:	https://www.worldscientific.com/doi/10.1142/S2010135X24500279