Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Combining diamond with GaN can significantly improve the heat dissipation performance of GaN-based devices. However, how to avoid the destructive damage to the GaN epi-layer caused by high-temperature hydrogen plasma during the diamond growth is still a problem. This study employed a Si transition l...

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Bibliographic Details

Published in:	Functional Diamond
Main Authors:	Yurui Wang, Deng Gao, Tong Zhang, Hao Zhang, Yu Zhang, Qiuming Fu, Hongyang Zhao, Zhibin Ma
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2023-12-01
Subjects:	mpcvd oes double-substrate structure diamond gan
Online Access:	http://dx.doi.org/10.1080/26941112.2023.2183097