Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on source-side injection are considered for properly...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Hung-Jin Teng, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyen Dang Chien, Chenhsin Lien, Chun-Hsing Shih
Format:	Article
Language:	English
Published:	MDPI AG 2020-11-01
Subjects:	Schottky barrier source-side injection charge-trapping memory energy-efficient non-planar double-gate high-k dielectrics
Online Access:	https://www.mdpi.com/2073-4352/10/11/1036