A novel 8T SRAM cell using PFC and PPC VS-CNTFET transistor

Abstract The 8T static random-access memory (SRAM) cell using carbon nanotube technology, positive feedback, and dynamic supply voltage scaling are presented in this work. Positive feedback strengthens the feedback loop and enhances the noise margin making SRAM cells less susceptible to disturbance...

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Bibliographic Details
Published in:Journal of Engineering and Applied Science
Main Authors: Vipin Kumar Sharma, Abhishek Kumar
Format: Article
Language:English
Published: SpringerOpen 2025-01-01
Subjects:
SRAM
8T cell
PPC
PFC
CNTFET
Low power
Online Access:https://doi.org/10.1186/s44147-025-00579-y

Internet

https://doi.org/10.1186/s44147-025-00579-y

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