IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

This paper clarifies the effect of gate inductance <inline-formula> <tex-math notation="LaTeX">$L_{g}$ </tex-math></inline-formula> inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different <inline-formul...

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Bibliographic Details
Published in:IEEE Access
Main Authors: Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-Ichi Nishizawa, Wataru Saito
Format: Article
Language:English
Published: IEEE 2023-01-01
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10018193/