High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction

Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of a...

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Bibliographic Details

Published in:	Materials & Design
Main Authors:	Kaiwen Gong, Lianbi Li, Wenzhi Yu, Haoran Mu, Jian Yuan, Ran Hao, Baiquan Liu, Zengxia Mei, Luyao Mei, Haozhe Li, Shenghuang Lin
Format:	Article
Language:	English
Published:	Elsevier 2023-04-01
Subjects:	2D heterojunction Avalanche photodetector CVD Mechanical exfoliation
Online Access:	http://www.sciencedirect.com/science/article/pii/S0264127523002630