A direct bonding copper degradation monitoring method for insulated gate bipolar transistor modules: Boundary‐dependent thermal network combined with feedback control
Abstract The direct bonding copper (DBC) substrates of insulated gate bipolar transistor (IGBT) modules degrade inevitably under cycling thermo‐mechanical stress, causing potential threat to the reliability of IGBT modules. However, little attention has been paid to monitoring their degradation. Thi...
| Published in: | High Voltage |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-12-01
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| Online Access: | https://doi.org/10.1049/hve2.12341 |